The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Aug. 13, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Heng Wu, Guilderland, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Chen Zhang, Guilderland, NY (US);

Eric Miller, Watervliet, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); H01L 21/8221 (2013.01); H01L 21/823475 (2013.01); H01L 27/088 (2013.01);
Abstract

A method for forming a stacked transistor includes forming a sacrificial cap over a first interconnect of a lower level transistor. The method further includes forming an upper level transistor above the sacrificial cap. The method further includes removing the sacrificial cap to form an opening such that the opening is delimited by the upper level transistor. The method further includes forming a second interconnect in the opening such that the second interconnect is in direct contact with the first interconnect.


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