The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Jul. 03, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Jen-Chou Tseng, Jhudong Township, TW;
Chia-Wei Hsu, New Taipei, TW;
Ming-Fu Tsai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsinchu, TW;
Abstract
Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.