The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Feb. 21, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Dale W. Collins, Boise, ID (US);

Paolo Fantini, Vimercate, IT;

Lorenzo Fratin, Buccinasco, IT;

Enrico Varesi, Milan, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); C01B 17/02 (2006.01); C01B 19/04 (2006.01); H10B 63/00 (2023.01); H10B 63/10 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8822 (2023.02); C01B 17/0243 (2013.01); C01B 19/04 (2013.01); H10B 63/10 (2023.02); H10B 63/80 (2023.02);
Abstract

Methods, systems, and devices for chalcogenide memory device compositions are described. A memory cell may use a chalcogenide material having a composition as described herein as a storage materials, a selector materials, or as a self-selecting storage material. A chalcogenide material as described herein may include a sulfurous component, which may be completely sulfur (S) or may be a combination of sulfur and one or more other elements, such as selenium (Se). In addition to the sulfurous component, the chalcogenide material may further include one or more other elements, such as germanium (Ge), at least one Group-III element, or arsenic (As).


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