The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Apr. 17, 2020
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Geoffrey Tucker, Tempe, AZ (US);

Lakshminarayan Viswanathan, Phoenix, AZ (US);

Jeffrey Kevin Jones, Chandler, AZ (US);

Elie A. Maalouf, Mesa, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H03F 1/30 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 1/301 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 23/3121 (2013.01); H01L 23/3675 (2013.01); H01L 23/528 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 24/97 (2013.01); H03F 3/21 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/92225 (2013.01); H03F 2200/451 (2013.01);
Abstract

Power amplifier modules (PAMs) having topside cooling interfaces are disclosed, as are methods for fabricating such PAMs. In embodiments, the method includes attaching the RF power die to a die support-surface of a module substrate. The RF power die is attached to the module substrate in an inverted orientation such that a frontside of the RF power die faces the module substrate. When attaching the RF power die to the module substrate, a frontside input/output interface of the RF power die is electrically coupled to corresponding substrate interconnect features of the module substrate. The method further includes providing a primary heat extraction path extending from the transistor channel of the RF power die to a topside cooling interface of the PAM in a direction opposite the module substrate.


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