The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Aug. 18, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Andrew M. Greene, Slingerlands, NY (US);

Yao Yao, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Veeraraghavan S. Basker, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0669 (2013.01); H01L 29/0653 (2013.01); H01L 29/16 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract

Semiconductor devices and methods of forming the same include recessing sacrificial layers in a stack of alternating sacrificial layers and channel layers using a first etch to form curved recesses at sidewalls of each sacrificial layer in the stack, with tails of sacrificial material being present at a top and bottom of each curved recess. Dielectric plugs are formed that each partially fill a respective curved recess, leaving exposed at least a portion of each tail of sacrificial material. The tails of sacrificial material are etched back using a second etch to expand the recesses. Inner spacers are formed in the expanded recesses.


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