The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Aug. 16, 2021
United Microelectronics Corp., Hsinchu, TW;
Chin-Hung Chen, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Chih-Kai Hsu, Tainan, TW;
Chun-Ya Chiu, Tainan, TW;
Chia-Jung Hsu, Tainan, TW;
Yu-Hsiang Lin, New Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A high voltage transistor structure including a substrate, a first isolation structure, a second isolation structure, a gate structure, a first source and drain region, and a second source and drain region is provided. The first isolation structure and the second isolation structure are disposed in the substrate. The gate structure is disposed on the substrate, at least a portion of the first isolation structure, and at least a portion of the second isolation structure. The first source and drain region and the second source and drain region are located in the substrate on two sides of the first isolation structure and the second isolation structure. The depth of the first isolation structure is greater than the depth of the second isolation structure.