The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Aug. 18, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hojin Kim, Albany, NY (US);
Stephen Mancini, East Greenbush, NY (US);
Soo Doo Chae, Cohoes, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/31144 (2013.01); H01L 21/76224 (2013.01); H01L 22/12 (2013.01);
Abstract
This disclosure describes a method for fabricating a plurality of semiconductor devices in a semiconductor wafer includes: bowing a semiconductor wafer including a substrate by covering the substrate with a strained layer; forming trenches at locations in scribe lines of the semiconductor wafer, the scribe lines identifying areas between adjacent dies on the semiconductor wafer; and reducing the bowing of the semiconductor wafer by filling the trenches with a stress-compensation material.