The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Aug. 20, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Bhaskar Jyoti Bhuyan, San Jose, CA (US);

Zeqing Shen, San Jose, CA (US);

Susmit Singha Roy, Sunnyvale, CA (US);

Abhijit Basu Mallick, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); B05D 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/02118 (2013.01); H01L 21/31133 (2013.01); H01L 21/76834 (2013.01); H01L 21/76837 (2013.01); B05D 1/60 (2013.01); B05D 1/62 (2013.01);
Abstract

Exemplary methods of semiconductor processing may include forming a layer of carbon-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may include an exposed region of a first dielectric material and an exposed region of a metal-containing material. The layer of carbon-containing material may be selectively formed over the exposed region of the metal-containing material. Forming the layer of carbon-containing material may include one or more cycles of providing a first molecular species that selectively couples with the metal-containing material. Forming the layer of carbon-containing material may include providing a second molecular species that selectively couples with the first molecular species. The methods may include selectively depositing a second dielectric material on the exposed region of the first dielectric material.


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