The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Jan. 18, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hengyuan Lee, Hsinchu, TW;
Cheng-Hsien Wu, Hsinchu, TW;
Yu-Sheng Chen, Taoyuan, TW;
Elia Ambrosi, Hsinchu, TW;
Chien-Min Lee, Hsinchu County, TW;
Xinyu Bao, Fremont, CA (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
An operation method for a memory device is provided. The memory device includes a two-terminal selector and a resistance variable storage element coupled to the two-terminal selector. The method includes providing a voltage pulse to the memory device. A voltage applied across the two-terminal selector during a falling part of the voltage pulse falls below a holding voltage of the two-terminal selector. A voltage falling rate of the falling part at which the voltage applied across the two-terminal selector reaches the holding voltage is raised for reducing threshold voltage drift of the two-terminal selector.