The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Oct. 01, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
A method for detecting an overlay precision and a method for compensating an overlay deviation are provided. The method for detecting the overlay precision includes providing a wafer to-be-detected, where the wafer to-be-detected includes a photoresist layer which has been exposed and developed; performing a first detection on the wafer to-be-detected using an optical overlay precision measurement and acquiring first overlay precision information of the photoresist layer; performing a second detection on the wafer to-be-detected using the optical overlay precision measurement, and acquiring second overlay precision information of the photoresist layer, where a wavelength or a polarization direction of a light source of the second detection is different from a wavelength or a polarization direction of a light source of the first detection; and acquiring overlay precision deviation information of the wafer to-be-detected according to the first overlay precision information and the second overlay precision information.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile