The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Jan. 12, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yong Wang, Singapore, SG;

Doreen Wei Ying Yong, Singapore, SG;

Bhaskar Jyoti Bhuyan, San Jose, CA (US);

John Sudijono, Singapore, SG;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); C23C 16/02 (2006.01); C23C 16/56 (2006.01); C23C 22/77 (2006.01); C23C 22/82 (2006.01);
U.S. Cl.
CPC ...
C23C 16/0227 (2013.01); C23C 16/04 (2013.01); C23C 16/56 (2013.01); C23C 22/77 (2013.01); C23C 22/82 (2013.01);
Abstract

Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.


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