The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Jun. 22, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Junli Wang, Slingerlands, NY (US);
Mukta Ghate Farooq, Hopewell Jct, NY (US);
Dechao Guo, Niskayuna, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 21/02532 (2013.01); H01L 21/0259 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01);
Abstract
A semiconductor device including a hybrid contact scheme for stacked FET is disclosed with integration of a BSPDN. A double-sided (both frontside and backside of the wafer) contact scheme with buried power rail (BPR) and backside power distribution network (BSPDN) provides optimum contact and interconnect. The stacked FET could include, for example, FINFET over FINFET, FINFET over nanosheet, or nanosheet over nanosheet.