The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Feb. 28, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Pokuan Ho, Taipei, TW;

Hsin-Ping Chen, Hsinchu County, TW;

Chia-Tien Wu, Taichung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/7681 (2013.01); H01L 21/76834 (2013.01); H01L 21/76847 (2013.01); H01L 23/5226 (2013.01); H01L 2221/1026 (2013.01); H01L 2224/05006 (2013.01);
Abstract

A semiconductor device includes a first conductive structure. The semiconductor device includes a first dielectric structure. The semiconductor device includes a second conductive structure. The first dielectric structure is positioned between a first surface of the first conductive structure and a surface of the second conductive structure. The semiconductor device includes an etch stop layer overlaying the first conductive structure. The semiconductor device includes a first spacer structure overlaying the first dielectric structure. The semiconductor device includes a second dielectric structure overlaying the first spacer structure and the etch stop layer.


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