The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Jul. 15, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Tadahiro Ishizaka, Nirasaki, JP;
Naotaka Noro, Boise, ID (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); C23C 16/02 (2006.01); C23C 16/18 (2006.01); C23C 16/448 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
C23C 16/045 (2013.01); C23C 16/0209 (2013.01); C23C 16/18 (2013.01); C23C 16/4488 (2013.01); C23C 16/455 (2013.01); C23C 16/52 (2013.01); H01L 21/28518 (2013.01);
Abstract
A method of forming a RuSi film, the method includes adsorbing silicon in a recess that is formed in a substrate and includes an insulating film by supplying a silicon-containing gas to the substrate, forming a Ru film in the recess by supplying a Ru-containing precursor to the recess in which the silicon is adsorbed, and forming a RuSi film by supplying a silicon-containing gas to the recess in which the Ru film is formed.
Quick Actions:
Ishizaka, Tadahiro. (2024). Method for forming rusi film and substrate processing system (U.S. Patent No. 11981992). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11981992
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile