The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Nov. 01, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Seunggeol Nam, Suwon-si, KR;
Jinseong Heo, Seoul, KR;
Sangwook Kim, Seongnam-si, KR;
Hagyoul Bae, Hanam-si, KR;
Taehwan Moon, Suwon-si, KR;
Yunseong Lee, Busan, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 29/0847 (2013.01); H01L 29/516 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01);
Abstract
Provided is a ferroelectric semiconductor device including a source and a drain having different polarities. The ferroelectric semiconductor may include a ferroelectric including zirconium oxide (ZrO), hafnium oxide (HfO), and/or hafnium-zirconium oxide (HfZrO, 0<x<1). The semiconductor device may have memory-like characteristics.