The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Aug. 09, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsmc China Company Limited, Shanghai, CN;
Lian-Jie Li, Shanghai, CN;
Yan-Bin Lu, Shanghai, CN;
Feng Han, Shanghai, CN;
Shuai Zhang, Shanghai, CN;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
TSMC CHINA COMPANY LIMITED, Shanghai, CN;
Abstract
A semiconductor device includes a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is over a semiconductor substrate. The drift region is in the semiconductor substrate and laterally extends past a first side of the gate structure. The source region is in the semiconductor substrate and adjacent a second side of the gate structure opposite the first side. The drain region is in the drift region. The doped region is in the drift region and between the drain region and the gate structure. From a top view the doped region has a strip pattern extending in parallel with a strip pattern of the gate structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile