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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11978773 B1

PDFFull Text
Date of Patent:
May. 07, 2024

Filed:

Mar. 25, 2021

Formation method of semiconductor device structure with semiconductor nanostructures

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Huan-Chieh Su, Tianzhong Township, Changhua County, TW;

Chun-Yuan Chen, HsinChu, TW;

Li-Zhen Yu, New Taipei, TW;

Shih-Chuan Chiu, Hsinchu, TW;

Cheng-Chi Chuang, New Taipei, TW;

Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Matthew E Gordon

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 27/088 (2013.01); H01L 29/0665 (2013.01); H01L 29/41775 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01);
Abstract

A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a base structure. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching the channel structures. The semiconductor device structure further includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. In addition, the semiconductor device structure includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Find Patent Forward Citations

Su, Huan-Chieh. (2024). Formation method of semiconductor device structure with semiconductor nanostructures (U.S. Patent No. 11978773). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11978773

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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