The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Jun. 08, 2023
Winbond Electronics Corp., Taichung, TW;
Tseng-Yao Pan, Taichung, TW;
Chien-Hsiang Yu, Taichung, TW;
Ching-Yung Wang, Taichung, TW;
Cheng-Hong Wei, Taichung, TW;
Ming-Tsang Wang, Taichung, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
A method manufacturing of a semiconductor structure including following steps is provided. A material layer is provided. A first mask layer is formed on the material layer. Core patterns are formed on the first mask layer. A spacer material layer is conformally formed on the core patterns. An etch-back process is performed on the spacer material layer. A portion of the spacer material layer located on two ends of the core pattern is removed, then spacer structures are formed. Each spacer structure includes a merged spacer and a non-merged spacer. The core patterns are removed. The first patterned mask layer is formed to cover a portion of the merged spacer and expose another portion of the merged spacer and the non-merged spacer. The first patterned mask layer and the spacer structure are used as a mask, and the first mask layer is patterned into a second patterned mask layer.