The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Feb. 17, 2022
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Harry-Hak-Lay Chuang, Zhubei, TW;
Kuo-Ching Huang, Hsinchu, TW;
Wei-Cheng Wu, Zhubei, TW;
Hsin Fu Lin, Hsinchu, TW;
Henry Wang, Hsinchu, TW;
Chien Hung Liu, Hsinchu, TW;
Tsung-Hao Yeh, Hsinchu, TW;
Hsien Jung Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.