The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Oct. 16, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jumyong Park, Cheonan-si, KR;

Solji Song, Suwon-si, KR;

Jinho An, Seoul, KR;

Jeonggi Jin, Seoul, KR;

Jinho Chun, Seoul, KR;

Juil Choi, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 21/76898 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 23/293 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05573 (2013.01);
Abstract

A semiconductor device is disclosed. The semiconductor device includes a via passivation layer disposed on an inactive surface of a substrate, a through-electrode vertically penetrating the substrate and the via passivation layer, a concave portion formed in the top surface of the via passivation layer and disposed adjacent to the through-electrode, and a via protective layer coplanar with the via passivation layer and the through-electrode and to fill the concave portion. In a horizontal cross-sectional view, the via protective layer has a band shape surrounding the through-electrode.


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