The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Nov. 24, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kenneth William Marr, Boise, ID (US);

Chiara Cerafogli, Boise, ID (US);

Michele Piccardi, Cupertino, CA (US);

Marco-Domenico Tiburzi, Avezzano, IT;

Eric Higgins Freeman, Boise, ID (US);

Joshua Daniel Tomayer, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01B 7/16 (2006.01); G01L 1/16 (2006.01); G01L 1/18 (2006.01); H01L 29/84 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); G01B 7/18 (2013.01); G01L 1/16 (2013.01); G01L 1/18 (2013.01); H01L 29/84 (2013.01);
Abstract

A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device.


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