The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Feb. 07, 2019
Merck Patent Gmbh, Darmstadt, DE;
Jacob Woodruff, Lexington, MA (US);
Guo Liu, Haverhill, MA (US);
Ravindra Kanjolia, North Andover, MA (US);
MERCK PATENT GMBH, Darmstadt, DE;
Abstract
Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods comprise delivering at least one precursor and an oxygen-free co-reactant, such as hydrazine or alkylhydrazine, to a substrate to form a ruthenium-containing film, wherein the at least one precursor corresponds in structure to Formula (I): (L)Ru(CO), wherein L is selected from the group consisting of a linear or branched C-C-alkenyl and a linear or branched C-C-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C-C-alkenyl, C-C-alkyl, alkoxy and NRR; wherein Rand Rare independently alkyl or hydrogen; and annealing the ruthenium-containing film under vacuum or in the presence of an inert gas such as Ar, N, or a reducing gas such as Hor a combination thereof.