The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Feb. 10, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Huai-Ying Huang, New Taipei, TW;

Yu-Ming Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 11/4091 (2006.01); G11C 11/419 (2006.01); H10B 10/00 (2023.01); H10B 12/00 (2023.01); H10B 41/40 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 10/18 (2023.02); G11C 11/4091 (2013.01); G11C 11/419 (2013.01); G11C 16/26 (2013.01); H10B 12/50 (2023.02); H10B 41/40 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device includes a semiconductor substrate, ground level circuitry, a plurality of stacked memory arrays and a plurality of sense amplifier units. The ground level circuitry is disposed on the semiconductor substrate. The stacked memory arrays are disposed at an elevated level over the ground level circuitry. The sense amplifier units are disposed on the semiconductor substrate and electrically coupled to the stacked memory arrays, wherein at least a portion of each of the sense amplifier units is disposed at the elevated level over the ground level circuitry.


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