The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Sep. 22, 2020
Ansys, Inc., Canonsburg, PA (US);
Deqi Zhu, San Jose, CA (US);
Norman Chang, Fremont, CA (US);
Lang Lin, Cupertino, CA (US);
Dinesh Kumar Selvakumaran, Pflugerville, TX (US);
Yu Lu, San Ramon, CA (US);
ANSYS, INC., Canonsburg, PA (US);
Abstract
Methods, machine readable media and systems for near-field electromagnetic simulation for side-channel emission analysis of an integrated circuit (IC) are described. In one embodiment, a method can include the following operations: simulating EM field strengths for a plurality of grid partitions of a circuit area of the IC based on a cryptographic work load applied to a model of the IC; identifying one or more of the grid partitions as a security sensitive region for the IC based on the EM field strengths, wherein one or more grid partitions outside of the security sensitive region are identified as non-security sensitive regions for the IC; and simulating EM fields for the IC to perform the EM side-channel emission analysis, wherein contributions of the EM fields from the non-security sensitive regions for the EM side-channel emission analysis are based on a linear superposition of wire currents in the non-security sensitive regions of the IC.