The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Feb. 22, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tao Yi Hung, Hsin-Chu, TW;

Yu-Xuan Huang, Hsinchu, TW;

Kuo-Ji Chen, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 23/5286 (2013.01); H01L 27/0292 (2013.01);
Abstract

An ESD protection device includes a PN diode formed in a semiconductor body. The PN diode has a first contact coupled to a metal structure on a front side of the semiconductor body and a second contact coupled to a metal structure on a back side of the semiconductor body. The metal coupled to the first contact is spaced apart from the metal coupled to the second contact by a thickness of the semiconductor body. This spacing greatly reduces the capacitance associated with the metal structures, which can substantially reduce the overall capacitance added to an I/O channel by the ESD protection device and thereby improve the performance of a high-speed circuit that uses the I/O channel.


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