The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

May. 07, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Bong seong Kim, Miyagi, JP;

Ken Kobayashi, Miyagi, JP;

Mitsunori Ohata, Miyagi, JP;

Yoon Ho Bae, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32146 (2013.01); H01J 37/321 (2013.01); H01J 37/32155 (2013.01); H01J 37/32568 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01); H01J 2237/3343 (2013.01);
Abstract

A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including a lower electrode; a source RF generator coupled to the plasma processing chamber and configured to generate a source RF signal including high states and low states in alternate manner; and a bias DC generator coupled to the lower electrode and configured to generate a bias DC signal including ON states and OFF states in alternate manner. Each ON state includes a plurality of cycles, each cycle including a first sequence of first pulses and a second sequence of second pulses, each first pulse having a first voltage level, and each second pulse having a second voltage level different from the first voltage level.


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