The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Dec. 13, 2021
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Yi Song, San Jose, CA (US);

Jiahui Yuan, Fremont, CA (US);

Jun Wan, San Jose, CA (US);

Deepanshu Dutta, Fremont, CA (US);

Assignee:

SanDisk Technologies LLC, Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01);
Abstract

A memory system identifies memory cells connected to a common word line that have had their threshold voltage unintentionally drift lower than programmed by determining whether memory cells meet two criteria: (1) the memory cells have threshold voltages within an offset of a read compare voltage of a data state; and (2) adjacent memory cells (connected to word lines that are adjacent to the common word line) are in one or more low data states. For those memory cells meeting the two criteria, the memory system performs some amount of programming on the memory cells to refresh the data stored in those memory cells to be as originally intended.


Find Patent Forward Citations

Loading…