The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Apr. 20, 2020
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Naoki Matsuhashi, Joetsu, JP;
Kouhei Sasamoto, Joetsu, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
The present invention provides a photomask blank which exhibits high adhesion of a resist film to a film containing chromium, and which is capable of achieving good resolution limit and good CD linearity during the formation of an assist pattern of a line pattern, said assist pattern supplementing the resolution of the main pattern of a photomask. A photomask blank () according to the present invention is provided, on a substrate, with: a film () to be processed; and, sequentially from the far side from the substrate, a first layer () which contains oxygen and nitrogen, while having a chromium content of 40% by atom or less, an oxygen content of 50% by atom or more, a nitrogen content of 10% by atom or less and a thickness of 6 nm or less, a second layer () which contains oxygen, nitrogen and carbon, while having a chromium content of 40% by atom or less, an oxygen content of 30% by atom or more, a nitrogen content of 17% by atom or more, a carbon content of 13% by atom or less and a thickness of 46 nm or more, and a third layer () which contains oxygen and nitrogen, while having a chromium content of 50% by atom or more, an oxygen content of 20% by atom or less and a nitrogen content of 30% by atom or more.