The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Jul. 30, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yogendra Yadav, Hsinchu, TW;
Chi-Chih Chen, Yunlin County, TW;
Ruey-Hsin Liu, Hsinchu, TW;
Chih-Wen Yao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a field plate, a gate electrode, and a first dielectric layer. The substrate has a top surface. The substrate includes a first drift region with a first conductivity type extending from the top surface of the substrate into the substrate, and includes a second drill region with the first conductivity type extending from the top surface of the substrate into the substrate and adjacent to the first drift region. The field plate is over the substrate. The gate electrode has a first portion and a second portion, wherein the first portion of the gate electrode is located over the field plate. The first dielectric layer is between the substrate and the field plate. The first portion of the gate electrode is overlapping with a boundary of the first drift region and the second drift region in the substrate.