The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Apr. 19, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Robert D Clark, Livermore, CA (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7606 (2013.01); H01L 21/02115 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/0254 (2013.01); H01L 21/02546 (2013.01); H01L 21/02568 (2013.01); H01L 29/1606 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01);
Abstract
A semiconductor device and method of forming. The semiconductor device contains microelectronic components embedded in a single crystalline dielectric material. The method of forming a semiconductor device includes providing a single crystalline substrate, epitaxially depositing a single crystalline dielectric material on the single crystalline substrate, and forming microelectronic components in the single crystalline dielectric material. The single crystalline dielectric material can contain carbon with a diamond structure or hexagonal boron nitride (h-BN) with a graphene structure.