The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Jul. 08, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ta-Chun Lin, Hsinchu, TW;
Kuo-Hua Pan, Hsinchu, TW;
Chih-Yung Lin, Hsinchu County, TW;
Jhon Jhy Liaw, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor structure includes forming a semiconductor fin over a substrate, forming a dummy gate stack over the semiconductor fin, depositing a dielectric layer over the dummy gate stack, and selectively etching the dielectric layer, such that a top portion and a bottom portion of the dielectric layer form a step profile. The method further includes removing portions of the dielectric layer to form a gate spacer and subsequently forming a source/drain feature in the semiconductor fin adjacent to the gate spacer.