The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Aug. 11, 2022
Western Digital Technologies, Inc., San Jose, CA (US);
Sarath Puthenthermadam, San Jose, CA (US);
Longju Liu, Fremont, CA (US);
Parth Amin, Livermore, CA (US);
Sujjatul Islam, San Jose, CA (US);
Jiahui Yuan, Fremont, CA (US);
Western Digital Technologies, Inc., San Jose, CA (US);
Abstract
Technology is disclosed herein for detecting grown bad blocks in a non-volatile storage system. A stress test may accelerate stressful conditions on the memory cells and thereby provide for early detection of grown bad blocks. The stress test may include applying a program voltage to a selected word line and a stress voltage that is less than a nominal boosting voltage to a word line adjacent one side of the selected word line. The combination of the program voltage and the stress voltage may generate an e-field that is stronger than an e-field that would be generated in a normal program operation, thereby accelerating the stress on the memory cells. The stress test mat further include programming all of the memory cells to a relatively high threshold voltage, which may create additional stress on the memory cells.