The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Jul. 27, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hai-Dang Trinh, Hsinchu, TW;

Chii-Ming Wu, Taipei, TW;

Hsing-Lien Lin, Hsin-Chu, TW;

Fa-Shen Jiang, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H01L 23/528 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H01L 23/528 (2013.01); H10B 63/30 (2023.02); H10N 70/021 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02);
Abstract

In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode disposed over one or more interconnects and a diffusion barrier layer on the bottom electrode. The diffusion barrier layer has an inner upper surface that is arranged laterally between and vertically below an outer upper surface of the diffusion barrier film. The outer upper surface wraps around the inner upper surface in a top-view of the diffusion barrier layer. A data storage structure is separated from the bottom electrode by the diffusion barrier layer. A top electrode is arranged over the data storage structure.


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