The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Mar. 24, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shi Ning Ju, Hsinchu, TW;
Chih-Hao Wang, Baoshan Township, TW;
Kuo-Cheng Chiang, Zhubei, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Wen-Ting Lan, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor transistor device includes a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. The gate structure wraps around the channel structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are disposed on opposite endings of the channel structure. The gate contact is disposed on the gate structure. The back-side source/drain contact is disposed under the first source/drain epitaxial structure. The first source/drain epitaxial structure has a concave bottom surface contacting the back-side source/drain contact.