The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Jul. 25, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Ching Lee, New Taipei, TW;

Chung-Chiang Wu, Taichung, TW;

Shih-Hang Chiu, Taichung, TW;

Hsuan-Yu Tung, Keelung, TW;

Da-Yuan Lee, Jhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02175 (2013.01); H01L 21/76841 (2013.01); H01L 21/76871 (2013.01); H01L 27/0886 (2013.01); H01L 29/66871 (2013.01);
Abstract

A method includes depositing a first work-function layer and a second work-function layer in a first device region and a second device region, respectively, and depositing a first fluorine-blocking layer and a second fluorine-blocking layer in the first device region and the second device region, respectively. The first fluorine-blocking layer is over the first work-function layer, and the second fluorine-blocking layer is over the second work-function layer. The method further includes removing the second fluorine-blocking layer, and forming a first metal-filling layer over the first fluorine-blocking layer, and a second metal-filling layer over the second work-function layer.


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