The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Nov. 22, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chi-Hung Liao, Taipei County, TW;
Wei Chang Cheng, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchi, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/956 (2006.01); G01N 21/95 (2006.01); G03F 7/16 (2006.01); H01L 21/027 (2006.01); H01L 21/67 (2006.01); H01L 21/68 (2006.01);
U.S. Cl.
CPC ...
G01N 21/95607 (2013.01); G01N 21/9501 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); H01L 21/0276 (2013.01); H01L 21/6715 (2013.01); H01L 21/67259 (2013.01); H01L 21/681 (2013.01);
Abstract
A photolithography method includes dispensing a first liquid toward a target layer through a nozzle at a first distance from the target layer; moving the nozzle such that the nozzle is at a second distance from the target layer, wherein the second distance is different from the first distance; dispensing a second liquid toward the target layer through the nozzle at the second distance from the target layer; and patterning the target layer after dispensing the first liquid and the second liquid.