The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Mar. 12, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Masanori Hosoya, Miyagi, JP;
Tangkuei Wang, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01J 37/04 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/04 (2013.01); H01J 37/32091 (2013.01); H01J 37/32183 (2013.01); H01J 37/3244 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02263 (2013.01); H01J 2237/334 (2013.01);
Abstract
A method of an etching includes preparing a substrate having a first region formed of silicon oxide and a second region formed of silicon nitride; etching the first region by exposing the substrate to plasma of a first processing gas including a fluorocarbon gas, and forming a deposit including fluorocarbon on the first region and the second region; etching the first region and the second region by radicals of the fluorocarbon included in the deposit; and removing the deposit by plasma of a second processing gas which does not include oxygen.