The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Jun. 20, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kazuya Daito, Milipitas, CA (US);

Yi Xu, San Jose, CA (US);

Yu Lei, Belmont, CA (US);

Takashi Kuratomi, San Jose, CA (US);

Jallepally Ravi, San Ramon, CA (US);

Pingyan Lei, San Jose, CA (US);

Dien-Yeh Wu, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32357 (2013.01); C23C 16/45536 (2013.01); C23C 16/50 (2013.01); H01J 37/32422 (2013.01); H01L 21/67028 (2013.01); H01L 21/67069 (2013.01); H05H 1/4652 (2021.05); H01J 2237/327 (2013.01); H01J 2237/332 (2013.01); H01J 2237/335 (2013.01);
Abstract

Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.


Find Patent Forward Citations

Loading…