The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Dec. 09, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Chen-Hao Lien, Taipei, TW;

Cheng-Yan Ji, New Taipei, TW;

Chu-Hsiang Hsu, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/456 (2013.01); H10B 12/0335 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02);
Abstract

The present disclosure provides semiconductor structure having an electrical contact. The semiconductor structure includes a semiconductor substrate and a doped polysilicon contact. The doped polysilicon contact is disposed over the semiconductor substrate. The doped polysilicon contact includes a dopant material having a dopant concentration equaling or exceeding about 10atom/cm.


Find Patent Forward Citations

Lien, Chen-Hao. (2024). Semiconductor structure having an electrical contact (U.S. Patent No. 11948991). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11948991

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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