The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Jun. 23, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Tse Hung, Hsinchu, TW;
Ang-Sheng Chou, Hsinchu, TW;
Hung-Li Chiang, Taipei, TW;
Tzu-Chiang Chen, Hsinchu, TW;
Chao-Ching Cheng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a gate layer, a channel material layer, a first dielectric layer and source/drain terminals. The gate layer is disposed over a substrate. The channel material layer is disposed over the gate layer, where a material of the channel material layer includes a first low dimensional material. The first dielectric layer is between the gate layer and the channel material layer. The source/drain terminals are in contact with the channel material layer, where the channel material layer is at least partially disposed between the source/drain terminals and over the gate layer, and the gate layer is disposed between the substrate and the source/drain terminals.