The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Jul. 08, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hsi-Kuei Cheng, Hsinchu County, TW;

Chih-Kang Han, Hsin-Chu, TW;

Ching-Fu Chang, Taipei, TW;

Hsin-Chieh Huang, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/4857 (2013.01); H01L 23/3121 (2013.01); H01L 23/3128 (2013.01); H01L 23/3192 (2013.01); H01L 23/5389 (2013.01); H01L 24/08 (2013.01); H01L 24/94 (2013.01); H01L 23/49816 (2013.01); H01L 23/562 (2013.01); H01L 2224/0801 (2013.01); H01L 2224/08112 (2013.01);
Abstract

A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.


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