The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Aug. 12, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yu-Der Chih, Hsin-Chu, TW;

May-Be Chen, Hsinchu, TW;

Yun-Sheng Chen, Hsinchu County, TW;

Jonathan Tsung-Yung Chang, Hsinchu, TW;

Wen Zhang Lin, Hsinchu, TW;

Chrong Jung Lin, Hsinchu, TW;

Ya-Chin King, Taipei, TW;

Chieh Lee, Miaoli County, TW;

Wang-Yi Lee, Taoyuan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H10B 63/30 (2023.02); H01L 29/401 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.


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