The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Aug. 30, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Hong-Shyang Wu, Taipei, TW;
Kuo-Ming Wu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0873 (2013.01); H01L 29/6656 (2013.01); H01L 29/66689 (2013.01);
Abstract
A semiconductor device including a substrate, a source region, a drain region, a first gate structure and a second gate structure is provided. The source region and a drain region are formed in the substrate. The first gate structure is formed on the substrate and adjacent to the source region. The second gate structure is formed on the substrate and adjacent to the drain region. The second gate structure is electrically coupled to the drain region.