The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Feb. 18, 2022
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Han Wui Then, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/8252 (2006.01); H01L 27/06 (2006.01); H01L 29/04 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8252 (2013.01); H01L 27/0605 (2013.01); H01L 29/045 (2013.01); H01L 29/267 (2013.01); H01L 29/66462 (2013.01); H01L 29/73 (2013.01); H01L 29/778 (2013.01);
Abstract
Techniques related to III-N transistors having improved performance, systems incorporating such transistors, and methods for forming them are discussed. Such transistors include first and second crystalline III-N material layers separated by an intervening layer other than a III-N material such that the first crystalline III-N material layer has a first crystal orientation that is inverted with respect to a second crystal orientation of the second crystalline III-N material layer.