The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Dec. 06, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Karthik Sarpatwari, Boise, ID (US);

Lingming Yang, Meridian, ID (US);

Nevil N. Gajera, Meridian, ID (US);

John Christopher M. Sancon, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/406 (2006.01); G11C 11/4074 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40622 (2013.01); G11C 11/40615 (2013.01); G11C 11/4074 (2013.01); G11C 11/4091 (2013.01);
Abstract

The present disclosure includes apparatuses, methods, and systems for performing refresh operations on memory cells. An embodiment includes a memory having a group of memory cells and one or more additional memory cells whose data state is indicative of whether to refresh the group of memory cells, and circuitry configured to apply a first voltage pulse to the group of memory cells to sense a data state of the memory cells of the group, apply, while the first voltage pulse is applied to the group of memory cells, a second voltage pulse having a greater magnitude than the first voltage pulse to the one or more additional memory cells to sense a data state of the one or more additional memory cells, and determine whether to perform a refresh operation on the group of memory cells based on the sensed data state of the one or more additional memory cells.


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