The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Oct. 21, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Julien Frougier, Albany, NY (US);

Su Chen Fan, Cohoes, NY (US);

Ravikumar Ramachandran, Pleasantville, NY (US);

Nicolas Loubet, Guilderland, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41725 (2013.01); H01L 21/823871 (2013.01); H01L 23/5286 (2013.01); H01L 27/0922 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01);
Abstract

A stacked device is provided. The stacked device includes a reduced height active device layer, and a plurality of lower source/drain regions in the reduced height active device layer. The stacked device further includes a lower interlayer dielectric (ILD) layer on the plurality of lower source/drain regions, and a conductive trench spacer in the lower interlayer dielectric (ILD) layer, wherein the conductive trench spacer is adjacent to one of the plurality of lower source/drain regions. The stacked device further includes a top active device layer adjacent to the lower interlayer dielectric (ILD) layer, and an upper source/drain section in the top active device layer. The stacked device further includes a shared contact in electrical connection with the upper source/drain section, the conductive trench spacer, and the one of the plurality of lower source/drain regions.


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