The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Mar. 04, 2022
Applicant:
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Inventors:
Assignee:
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 7/12 (2006.01); G11C 7/18 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1048 (2013.01); G11C 7/1039 (2013.01); G11C 7/12 (2013.01); G11C 7/18 (2013.01);
Abstract
The present disclosure provides buffer circuits of 3D NAND memory device. In some embodiments, the buffer circuit comprises a first bit line segment sensing branch connected to a first bit line segment and including a low-voltage latch, and a second bit line segment sensing branch connected to a second bit line segment and including a sensing latch. The first bit line segment sensing branch and the second bit line segment sensing branch are parallel connected to a sensing node of the page buffer circuit.