The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Feb. 11, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hidehiro Fujiwara, Hsinchu, TW;

Haruki Mori, Hsinchu, TW;

Wei-Chang Zhao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/417 (2006.01); G06F 7/544 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
G11C 11/417 (2013.01); G06F 7/5443 (2013.01); G11C 11/412 (2013.01);
Abstract

A memory device has a memory array of a plurality of memory cells arranged in a plurality of columns and a plurality of rows. The memory cells in each of the plurality of columns include first memory cells and second memory cells alternately arranged along a column direction of the plurality of columns. A first computation circuit is coupled to the first memory cells in each of the plurality of columns, and is configured to generate first output data corresponding to a first computation performed on first weight data stored in the first memory cells. A second computation circuit is coupled to the second memory cells in each of the plurality of columns, and is configured to generate second output data corresponding to a second computation performed on second weight data stored in the second memory cells.


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