The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Jul. 19, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jaehyuk Chang, Yongin-si, KR;

Taejoon Kim, Yongin-si, KR;

Hyunkyu Sun, Yongin-si, KR;

Sikyung Lim, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/70 (2012.01);
U.S. Cl.
CPC ...
G03F 1/70 (2013.01);
Abstract

A method of managing a critical dimension error includes (i) defining, in a photomask, N openings having a width, where N is a natural number, (ii) using graphs for each of the N openings, each of the graphs being obtained by setting locations through an opening of the N openings as a first axis and an intensity of transmitting light as a second axis, obtaining ILSproportional to an inclination of a tangent to a graph of the graphs at a location corresponding to an edge of an opening and Iwhich is an intensity of transmitting light at the location, where i is a natural number from 1 to N, (iii) obtaining, with respect to each of the N openings, a real width CDof the openings, and (iv) when obtaining AIMEEFwhich is an aerial image mask error enhancement factor with respect to each of the N openings according to an equation below:


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