The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Mar. 09, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Sheng-Liang Pan, Hsinchu, TW;
Yungtzu Chen, Hsinchu, TW;
Chung-Chieh Lee, Taipei, TW;
Yung-Chang Hsu, Hsinchu, TW;
Chia-Yang Hung, Kaohsiung, TW;
Po-Chuan Wang, Hsinchu, TW;
Guan-Xuan Chen, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/02126 (2013.01); H01L 21/0217 (2013.01); H01L 29/0847 (2013.01); H01L 29/4983 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.